Pulsed magnetic resonance of Alq3 OLED detected by electroluminescence
Identifieur interne : 000636 ( Main/Repository ); précédent : 000635; suivant : 000637Pulsed magnetic resonance of Alq3 OLED detected by electroluminescence
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Abstract
The aim of the present work is to investigate the nature of spin dependent processes in an organic light emitting diode based on a ITO/α-NPD/Alq3 structure. The electroluminescence time response of the sample is monitored while the OLED is exposed to a high power resonant microwave pulse. Measurements are carried out at room temperature. The time scale of the induced transition is found to be independent of the bias voltage. It is shown, by way of a simulation, that this behavior appears inconsistent with models which attribute a change in the electroluminescence to a variation in charge mobility. Spin dependent processes directly related to a change in the rate of charge recombination play therefore a relevant role in Alq3 light emitting diodes.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Pulsed magnetic resonance of Alq<sub>3</sub> OLED detected by electroluminescence</title><author><name sortKey="Comande, F" uniqKey="Comande F">F. Comande</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institutde Physique de la Matière Condensèe, École Polytechnique Fédérate de Lallsanne-EPFL. Station 3</s1><s2>1015 Lausanne</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Suisse</country><placeName><settlement type="city">Lausanne</settlement><region nuts="3" type="region">Canton de Vaud</region></placeName></affiliation></author><author><name sortKey="Ansermet, J Ph" uniqKey="Ansermet J">J.-Ph. Ansermet</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institutde Physique de la Matière Condensèe, École Polytechnique Fédérate de Lallsanne-EPFL. Station 3</s1><s2>1015 Lausanne</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Suisse</country><placeName><settlement type="city">Lausanne</settlement><region nuts="3" type="region">Canton de Vaud</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0270857</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0270857 INIST</idno><idno type="RBID">Pascal:13-0270857</idno><idno type="wicri:Area/Main/Corpus">000922</idno><idno type="wicri:Area/Main/Repository">000636</idno></publicationStmt><seriesStmt><idno type="ISSN">0379-6779</idno><title level="j" type="abbreviated">Synth. met.</title><title level="j" type="main">Synthetic metals</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compound</term><term>Electroluminescence</term><term>Indium oxide</term><term>Light emitting diode</term><term>Magnetic field effect</term><term>Magnetic resonance</term><term>Microwave</term><term>Organic semiconductors</term><term>Quinoline derivatives</term><term>Time response</term><term>Tin oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Résonance magnétique</term><term>Electroluminescence</term><term>Diode électroluminescente</term><term>Réponse temporelle</term><term>Hyperfréquence</term><term>Effet champ magnétique</term><term>Composé de l'aluminium</term><term>Dérivé de la quinoléine</term><term>Oxyde d'étain</term><term>Oxyde d'indium</term><term>Semiconducteur organique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The aim of the present work is to investigate the nature of spin dependent processes in an organic light emitting diode based on a ITO/α-NPD/Alq3 structure. The electroluminescence time response of the sample is monitored while the OLED is exposed to a high power resonant microwave pulse. Measurements are carried out at room temperature. The time scale of the induced transition is found to be independent of the bias voltage. It is shown, by way of a simulation, that this behavior appears inconsistent with models which attribute a change in the electroluminescence to a variation in charge mobility. Spin dependent processes directly related to a change in the rate of charge recombination play therefore a relevant role in Alq<sub>3</sub> light emitting diodes.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0379-6779</s0></fA01><fA02 i1="01"><s0>SYMEDZ</s0></fA02><fA03 i2="1"><s0>Synth. met.</s0></fA03><fA05><s2>173</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Pulsed magnetic resonance of Alq<sub>3</sub> OLED detected by electroluminescence</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Spins in Organic Semiconductors 2012</s1></fA09><fA11 i1="01" i2="1"><s1>COMANDE (F.)</s1></fA11><fA11 i1="02" i2="1"><s1>ANSERMET (J.-Ph.)</s1></fA11><fA12 i1="01" i2="1"><s1>MORLEY (Nicola)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Institutde Physique de la Matière Condensèe, École Polytechnique Fédérate de Lallsanne-EPFL. 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